DatasheetsPDF.com

TK75A06K3

Toshiba Semiconductor
Part Number TK75A06K3
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 20, 2014
Detailed Description TK75A06K3 MOSFETs Silicon N-channel MOS (U-MOS ) TK75A06K3 1. Applications • Switching Voltage Regulators 2. Features...
Datasheet PDF File TK75A06K3 PDF File

TK75A06K3
TK75A06K3

Overview
TK75A06K3 MOSFETs Silicon N-channel MOS (U-MOS ) TK75A06K3 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.
5 mΩ (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating 60 ±20 75 225 35 103 75 150 -55 to 150 W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2011-01-25 Rev.
1.
0 TK75A06K3 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 3.
57 62.
5 Unit /W Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 25 V, Tch = 25 (initial), L = 25.
1 µH, RG = 1 Ω, IAR = 75 A Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2011-01-25 Rev.
1.
0 TK75A06K3 6.
Electrical Characteristics 6.
1.
Static Characteristics (Ta = 25 unless otherwise specified) Characteristics ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)