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TPCC8003-H

Toshiba Semiconductor
Part Number TPCC8003-H
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Sep 20, 2014
Detailed Description TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8003-H High-Efficiency DC-DC Conve...
Datasheet PDF File TPCC8003-H PDF File

TPCC8003-H
TPCC8003-H


Overview
TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8003-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.
2 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 14.
3 mΩ (typ.
) ( VGS = 4.
5 V) High forward transfer admittance: |Yfs| = 33 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
2 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR (Tc = 25℃) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 13 39 22 1.
9 Unit V V V A W W 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE Pulsed (Note 1) (Tc = 25℃) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation Drain power dissipation (t = 10 s) (Note 2b) 0.
7 W JEDEC JEITA ⎯ ⎯ 2-3X1A Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy 44 13 1.
12 150 −55 to 150 mJ A mJ °C °C TOSHIBA Weight: 0.
02 g (typ.
) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the 1 2 3 absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
H...


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