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TPCC8005-H

Toshiba Semiconductor
Part Number TPCC8005-H
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 20, 2014
Detailed Description TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8005-H High-Efficiency DC-DC Conve...
Datasheet PDF File TPCC8005-H PDF File

TPCC8005-H
TPCC8005-H

Overview
TPCC8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8005-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.
1 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 5.
2 mΩ (typ.
)( VGS = 4.
5 V) High forward transfer admittance: |Yfs| = 79 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD Rating 30 30 ±20 26 78 30 1.
9 W W 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE Unit V V V A Pulsed (Note 1) Drain power dissipation Drain power dissipation (Tc = 25 ) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) PD 0.
7 W JEDEC JEITA ⎯ ⎯ 2-3X1A Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25 Channel temperature Storage temperature range ) (Note 4) EAS IAR EAR Tch Tstg 176 26 2.
74 150 −55 to 150 mJ A mJ °C °C TOSHIBA Weight: 0.
02 g (typ.
) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the 1 2 3 absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
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