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AP9T18GJ-HF-3

Part Number	AP9T18GJ-HF-3
Manufacturer	Advanced Power Electronics
Description	N-channel Enhancement-mode Power MOSFET
Published	Sep 21, 2014
Detailed Description	Advanced Power Electronics Corp. AP9T18GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Supports Gate Drive as low as...
Datasheet	AP9T18GJ-HF-3 PDF File

Overview

Advanced Power Electronics Corp.
AP9T18GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Supports Gate Drive as low as 2.
5V Fast Switching Characteristics Low Gate Charge RoHS-compliant, Halogen-free G S D BV DSS R DS(ON) ID 20V 14mΩ 38A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S TO-252 (H) The AP9T18GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters.
The through-hole TO-251 version (AP9T18GJ-HF-3) is available where a small PCB footprint is required.
G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 20 ±16 38 24 140 31 0.
25 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 110 Units °C/W °C/W Ordering Information AP9T18GH-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) AP9T18GJ-HF-3TB : in RoHS-compliant halogen-free TO-251 shipped in tubes (80pcs/tube) ©2009 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200809123-3 1/6 Advanced Power Electronics Corp.
AP9T18GH/J-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min.
20 0.
5 - Typ.
0.
01 33 16 3 9 12 80 22 12 1115 280 220 1.
54 Max.
Units 14 28 1.
5 1 25 ± 100 25 1790 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient ...

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AP9T18GJ-HF-3 N-channel Enhancement-mode Power MOSFET - Advanced Power Electronics

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