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AP1RA03GMT-HF-3

Advanced Power Electronics
Part Number AP1RA03GMT-HF-3
Manufacturer Advanced Power Electronics
Description N-channel Enhancement mode Power MOSFET
Published Sep 21, 2014
Detailed Description Advanced Power Electronics Corp. AP1RA03GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement SO-8...
Datasheet PDF File AP1RA03GMT-HF-3 PDF File

AP1RA03GMT-HF-3
AP1RA03GMT-HF-3

Overview
Advanced Power Electronics Corp.
AP1RA03GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement SO-8 Compatible with Heatsink Low On-resistance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 1.
59mΩ 185A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK® 5x6 package is specially designed for DC-DC converter applications, with a foot print that is compatible with the popular SO-8 and offers a backside heat sink and lower package profile.
S S D D D D S G PMPAK®5x6 Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TA=25°C ID at TA=70°C IDM PD at TC=25°C PD at TA=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 185 46 36.
7 300 83.
3 5 4 Units V V A A A A W W mJ °C °C Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 28.
8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 1.
5 25 Units °C/W °C/W Ordering Information AP1RA03GMT-HF-3TR RoHS-compliant halogen-free PMPAK®5x6, shipped on tape and reel (3000pcs/reel) PMPAK® is a registered trademark of Advanced Power Electronics Corp.
©2011 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 201103022-3 1/5 Advanced Power Electronics Corp.
AP1RA03GMT-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=20A VGS=4.
5V, ID=20A Min.
30 1 - Typ.
80 24 5 14 10 100 30 95 800 230 1.
6 Max.
Units 1.
59 3 3 1 ±100 38 3.
2 V mΩ mΩ V S uA nA n...


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