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AP2308GEN-HF

Advanced Power Electronics
Part Number AP2308GEN-HF
Manufacturer Advanced Power Electronics
Description N-channel Enhancement mode Power MOSFET
Published Sep 21, 2014
Detailed Description AP2308GEN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V Gate Drive ▼ Lower Gate Charge ▼ F...
Datasheet PDF File AP2308GEN-HF PDF File

AP2308GEN-HF
AP2308GEN-HF

Overview
AP2308GEN-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Capable of 2.
5V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free SOT-23 D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G 20V 600mΩ 1.
2A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.
5V Continuous Drain Current , VGS @ 4.
5V Pulsed Drain Current 1 3 3 Rating 20 +8 1.
2 1 3.
6 0.
69 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 180 Unit ℃/W 1 201204255 Data and specifications subject to change without notice AP2308GEN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
20 0.
5 - Typ.
0.
1 1 1.
2 0.
4 0.
3 17 36 76 73 37 17 13 Max.
Units 600 2 1.
25 1 10 +30 2 60 V V/℃ mΩ Ω V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.
5V, ID=1.
2A VGS=2.
5V, ID=0.
3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 VDS=VGS, ID=250uA VDS=5V, ID=1.
2A VDS=20V, VGS=0V VGS=+8V, VDS=0V ID=1.
2A VDS=16V VGS=4.
5V VDS=10V ID=1.
2A RG=3.
3Ω,VGS=5V RD=10Ω VGS=0V VDS=10V f=1.
0MHz Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V Gate-Source Charge Gate-Drai...


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