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AP0203GMT-HF

Advanced Power Electronics
Part Number AP0203GMT-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 21, 2014
Detailed Description AP0203GMT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ SO-8 Compatible with He...
Datasheet PDF File AP0203GMT-HF PDF File

AP0203GMT-HF
AP0203GMT-HF

Overview
AP0203GMT-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 2.
2mΩ 155A D S D D D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, □ ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile.
S S S G PMPAK 5x6 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 155 38 30 300 83.
3 5 4 Units V V A A A A W W mJ ℃ ℃ Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 28.
8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 1.
5 25 Units ℃/W ℃/W Data & specifications subject to change without notice 1 200910191 AP0203GMT-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.
5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Min.
30 1 - Typ.
80 38 7 22 13.
5 11.
5 52 42 820 420 1.
3 Max.
Units 2.
2 3.
6 3 10 +100 60 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=30V, VGS=0V VGS=+20V ID=20...


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