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AP9412AGM-HF-3

Advanced Power Electronics
Part Number AP9412AGM-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 21, 2014
Detailed Description Advanced Power Electronics Corp. AP9412AGM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Ultra...
Datasheet PDF File AP9412AGM-HF-3 PDF File

AP9412AGM-HF-3
AP9412AGM-HF-3

Overview
Advanced Power Electronics Corp.
AP9412AGM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Ultra Low On-Resistance Fast Switching Performance RoHS-compliant, halogen-free D BV DSS G S 30V 6.
0mΩ 16A RDS(ON) ID Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP9412AGM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
D D D G SO-8 S S S Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 16 12.
8 50 Units V V A A A Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 2.
5 0.
02 -55 to 150 -55 to 150 W W/°C °C °C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP9412AGM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2012 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 201201194-3 1/5 Advanced Power Electronics Corp.
AP9412AGM-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA 2 Min.
30 1 - Typ.
43 18 3.
7 8 9 5 32 17 435 250 1 Max.
Units 6 8 3 10 25 ±100 29 1.
5 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS=10V, ID=16A VGS=4.
5V, ID=12A VDS=VGS, ID=250uA VDS=10V, ID=16A VDS=30V, VGS=0V VGS=±20V, VDS=0V ID=12A VDS=15V VGS...


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