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AP9412AGI-HF-3

Part Number	AP9412AGI-HF-3
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 21, 2014
Detailed Description	Advanced Power Electronics Corp. AP9412AGI-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fully...
Datasheet	AP9412AGI-HF-3 PDF File

Overview

Advanced Power Electronics Corp.
AP9412AGI-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fully isolated package Low Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 6mΩ 68A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP9412AGI-HF-3 is in the TO-220CFM isolated through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached isolated heatsink is required.
This device is well suited for use in low voltage switching applications such as DC-DC converters.
G D S TO-220CFM (I) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 68 43 250 34.
7 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.
6 65 Unit °C/W °C/W Ordering Information AP9412AGI-HF-3TB : in RoHS-compliant halogen-free TO-220CFM, shipped in tubes (50pcs/tube) ©2012 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200805081-3 1/5 Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.
5V, ID=30A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 AP9412AGI-HF-3 Min.
30 1 - Typ.
30 21 3.
6 12 9 80 23 15 435 250 Max.
Units 6 8 3 10 ±100 34 V mΩ mΩ...

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