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AP9465GEM-HF-3

Advanced Power Electronics
Part Number AP9465GEM-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 23, 2014
Detailed Description Advanced Power Electronics Corp. AP9465GEM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low O...
Datasheet PDF File AP9465GEM-HF-3 PDF File

AP9465GEM-HF-3
AP9465GEM-HF-3

Overview
Advanced Power Electronics Corp.
AP9465GEM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free D BV DSS G S 40V 25mΩ 7.
8A RDS(ON) ID Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP9465GEM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
D D D G SO-8 S S S Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 ±16 7.
8 6.
3 30 Units V V A A A Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 2.
5 0.
02 -55 to 150 -55 to 150 W W/°C °C °C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP9465GEM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2009 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200811133-3 1/5 Advanced Power Electronics Corp.
AP9465GEM-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=1mA Min.
40 0.
8 - Typ.
0.
03 15 8.
5 1.
6 4.
1 5.
3 6.
7 20.
5 4.
5 610 90 60 1.
8 Max.
Units 25 32 2.
5 1 25 ±30 14 980 2.
4 V V/°C mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.
5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Sou...


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