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AP60T06GP-HF-3

Advanced Power Electronics
Part Number AP60T06GP-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 23, 2014
Detailed Description Advanced Power Electronics Corp. AP60T06GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low O...
Datasheet PDF File AP60T06GP-HF-3 PDF File

AP60T06GP-HF-3
AP60T06GP-HF-3

Overview
Advanced Power Electronics Corp.
AP60T06GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 55V 12mΩ 46A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP60T06GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required.
G D S TO-220 (P) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 55 ±20 46 29 160 44.
6 2 -55 to 150 -55 to 150 Units V V A A A W W °C °C Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.
8 62 Units °C/W °C/W Ordering Information AP60T06GP-HF-3TB RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube) ©2011 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 201101181-3 1/5 Advanced Power Electronics Corp.
AP60T06GP-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=44V, VGS=0V VGS=±20V, VDS=0V ID=20A VDS=48V VGS=10V VDS=30V ID=20A RG=3.
3Ω VGS=10V VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Min.
55 2 - Typ.
26 28 6.
5 13 11.
5 42 20 8 240 140 1 Max.
Units 12 5 25 ±100 45 ...


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