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AP98T06GI-HF-3

Advanced Power Electronics
Part Number AP98T06GI-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 23, 2014
Detailed Description Advanced Power Electronics Corp. AP98T06GI-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low O...
Datasheet PDF File AP98T06GI-HF-3 PDF File

AP98T06GI-HF-3
AP98T06GI-HF-3

Overview
Advanced Power Electronics Corp.
AP98T06GI-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free D BV DSS RDS(ON) G S 60V 5mΩ 67A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP98T06GI-HF-3 is in the TO-220CFM package, which is widely used for commercial and industrial applications, where a low PCB footprint and/or isolated tab mounting is required.
G D S TO-220CFM (I) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 60 ±20 67 42 260 41.
6 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3 65 Units °C/W °C/W Ordering Information AP98T06GI-HF-3TR RoHS-compliant, halogen-free TO-220CFM, shipped in tubes.
©2010 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200910191-3 1/5 Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 AP98T06GI-HF-3 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=48V, VGS=0V VGS= ±20V, VDS=0V ID=40A VDS=48V VGS=10V VDS=30V ID=40A RG=1Ω , VGS=10V RD=0.
75Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Min.
60 2 Typ.
82 88 14 43 17 64 35 18 1000 385 1.
4 Max.
Units 5 4 25 ±100 ...


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