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AP9972AGP-HF

Advanced Power Electronics
Part Number AP9972AGP-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 23, 2014
Detailed Description AP9972AGP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Fast ...
Datasheet PDF File AP9972AGP-HF PDF File

AP9972AGP-HF
AP9972AGP-HF

Overview
AP9972AGP-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 16mΩ 60A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onG resistance and cost-effectiveness.
D The TO-220 package is widely preferred for commercial-industrial applications and suited for low voltage applications.
S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 +25 60 38 240 89 0.
7 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.
4 62 Units ℃/W ℃/W 1 201203075 Data and specifications subject to change without notice AP9972AGP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=60V, VGS=0V VGS=+25V, VDS=0V ID=40A VDS=48V VGS=10V VDS=30V ID=40A RG=3.
3Ω,VGS=10V RD=0.
75Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Min.
60 2 - Typ.
0.
06 44 49 13 20 14 80 27 57 290 240 2 Max.
Units 16 4 10 250 +100 80 3 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source ...


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