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AP9972GP-HF

Advanced Power Electronics
Part Number AP9972GP-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 23, 2014
Detailed Description AP9972GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Single Drive Requirement ▼ RoHS...
Datasheet PDF File AP9972GP-HF PDF File

AP9972GP-HF
AP9972GP-HF

Overview
AP9972GS/P-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 18mΩ 60A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9972GP) are available for low-profile applications.
G D G D S TO-263(S) TO-220(P) S Units V V A A A W W/ ℃ mJ A ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 +25 60 38 230 89 0.
7 3 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current 3 45 30 -55 to 150 -55 to 150 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 1.
4 40 62 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 201104186 Downloaded from Elcodis.
com electronic components distributor AP9972GS/P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA 2 Min.
60 1 - Typ.
0.
06 55 32 8 20 11 58 45 80 280 230 1.
7 Max.
Units 18 22 3 10 250 +100 51 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown...


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