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2SC2769

Part Number	2SC2769
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Sep 23, 2014
Detailed Description	isc Silicon NPN Power Transistor 2SC2769 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ...
Datasheet	2SC2769 PDF File

Overview

isc Silicon NPN Power Transistor 2SC2769 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VCEO(SUS) Collector-Emitter Voltage 200 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction ...

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