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GFP5N60

ETC
Part Number GFP5N60
Manufacturer ETC
Description N-Channel enhancement mode power field effect Transistors
Published Sep 24, 2014
Detailed Description GFP5N60 General Description() These N-Channel enhancement mode power field effect Transistors are produced using planar ...
Datasheet PDF File GFP5N60 PDF File

GFP5N60
GFP5N60

Overview
GFP5N60 General Description() These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology.
GFP5N60N，DMOS 。 This advanced technology has been especially tailored to minimize on - state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and commutaion mode .
These devices are well suited for high efficiency switch mode power supply.
GFP5N60、 ，。 TO-220 1.
Gate 2.
Drain 3.
Source Absolute Maximum ratings（，，T=25 ℃ ） Characteristics（） (） Symbol（） BVDSS ID VGS EAS PD TSTG RθJC VSD Value(） 600 5 + 30 300 120 -55 ~150 1.
18 1.
4 Units() V A V mJ W ℃ ℃/ W V Characteristics Symbol (） VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min.
() 2.
0 - Typ.
() 1.
6 4 560 80 9 13 45 35 40 16 3.
5 7.
8 Max.
() 4.
0 +100 10 2.
0 730 100 12 35 100 Units () V nA uA Ω S Test Conditions () VDS= VGS,ID=250uA VGS= +30V, VDS= 0V VDS=600V ,VGS= 0V VGS= 10V,ID=2.
5A VDS= 50V, ID=2.
5A VGS= 0V, VDS= 25V F=1.
0MHz pF ns 80 90 20 nC VDD= 300V, ID= 5A RG=25 Ω VDS= 480V, VGS= 10V ID=5A Page : 1/5 Top: 101 ID, Drain Current [ A] ID, Drain Current [ A] VGS 15V 10V 8.
0V 7.
0V 6.
5V 6.
0V Bottom: 5.
5V 101 150℃ 25℃ -55℃ 100 100 10-1 ※Notes 1.
250us Pulse Test 2.
Tc=25℃ 100 101 ※Notes: 1.
VDS=50V 2.
250us Pulse test 10-1 2 4 6 8 10 10-1 VDS, Drain-Source Voltage[ V] VGS, Gate-Source Voltage[ V] Figure 1.
On-Region Characteristics Figure 2.
Transfet Characteristics 5 IDR, Reverse Drain Current [ A] Drain-Source On-Resistance 4 VGS=10V i 101 VGS=20V 3 RDS(ON), [ Ω ] 2 100 150℃ 25℃ 1 ※Notes:TJ=25 ℃ 0 0 2 4 6 8 10 12 14 ※Notes: 1.
VGS=0V 2.
250us Pulse Test 10-1 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 1.
4 ID, Drain Current[ A] VSD, Source-Drain Voltage[ V] Figure 3.
On-Resistance Variation vs.
Drain Current and Gate Voltage Figure 4.
Body Diode Forward Voltage Variation vs.
Source Current and Temperature 12 1200 1000 VGS, Gate-Source Voltage[ V...


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