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AP2330GN-HF-3

Advanced Power Electronics
Part Number AP2330GN-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 25, 2014
Detailed Description Advanced Power Electronics Corp. AP2330GN-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Ga...
Datasheet PDF File AP2330GN-HF-3 PDF File

AP2330GN-HF-3
AP2330GN-HF-3

Overview
Advanced Power Electronics Corp.
AP2330GN-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Surface Mount Device RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 90V 240mΩ 1.
7A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP2330GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.
This device is well suited for use in medium current applications such as voltage conversion or switch applications.
D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 90 ± 20 1.
7 1.
3 6 1.
38 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W Ordering Information AP2330GN-HF-3TR : in RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel ©2011 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200912082-3 1/5 Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 AP2330GN-HF-3 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=1.
5A VDS=VGS, ID=250uA VDS=10V, ID=1.
5A VDS=72V, VGS=0V VGS=±20V, VDS=0V ID=1.
5A VDS=80V VGS=10V VDS=50V ID=1A RG=3.
3Ω ,VGS=10V RD=50Ω VGS=0V VDS=25V f=1.
0MHz Min.
90 2.
8 - T...


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