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AP80T10GR-HF-3

Advanced Power Electronics
Part Number AP80T10GR-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 25, 2014
Detailed Description Advanced Power Electronics Corp. AP80T10GR-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% ...
Datasheet PDF File AP80T10GR-HF-3 PDF File

AP80T10GR-HF-3
AP80T10GR-HF-3

Overview
Advanced Power Electronics Corp.
AP80T10GR-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Tested Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 100V 9.
5mΩ 85A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP80T10GR-HF-3 is in the TO-262 package, which is widely used for commercial and industrial applications, and is well-suited for low voltage applications such as DC/DC converters and motor drives.
G D TO-262 (R) S Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current, Pulsed Drain Current 1 Rating 100 ±20 85 80 60 300 166 -55 to 175 -55 to 175 Units V V A A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.
9 62 Units °C/W °C/W Ordering Information AP80T10GR-HF-3TB RoHS-compliant halogen-free TO-262, shipped in tubes ©2010 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 201008171-3 1/5 Advanced Power Electronics Corp.
AP80T10GR-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A Min.
100 - Typ.
- Max.
Units 9.
5 V mΩ VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) o VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=80V, VGS=0V VGS=±20V ID=40A VDS=80V VGS=10V VDS=50V ID=30A RG=1Ω , VGS=10V RD=1.
66Ω VGS=0V VDS=25V f=1.
0MHz 2 - 7...


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