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AP75T10GP-HF

Advanced Power Electronics
Part Number AP75T10GP-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 25, 2014
Detailed Description AP75T10GP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ F...
Datasheet PDF File AP75T10GP-HF PDF File

AP75T10GP-HF
AP75T10GP-HF

Overview
AP75T10GP-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 100V 15mΩ 65A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 65 41 260 138 1.
11 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.
9 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200807113 AP75T10GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=1mA Min.
100 1 Min.
- Typ.
0.
09 52 69 12 39 12 75 220 250 540 310 1.
1 Typ.
51 74 Max.
Units 15 21 3 10 100 +100 110.
4 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Symbol VSD trr Qrr Static Drain-Source On-Resistance VGS=10V, ID=30A VGS=4.
5V, ID=16A VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=100V, VGS=0V Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (T j=...


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