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AP55T10GP-HF

Advanced Power Electronics
Part Number AP55T10GP-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 25, 2014
Detailed Description Advanced Power Electronics Corp. AP55T10GP-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Dr...
Datasheet PDF File AP55T10GP-HF PDF File

AP55T10GP-HF
AP55T10GP-HF

Overview
Advanced Power Electronics Corp.
AP55T10GP-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP55T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-220 package is widely preferred for all commercialindustrial through hole applications.
The low thermal resistance and low package cost contribute to the worldwide popular package.
BVDSS RDS(ON) ID G D S 100V 16.
5mΩ 56A TO-220(P) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation +20 V 56 A 40 A 160 A 125 W PD@TA=25℃ TSTG TJ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 2 -55 to 175 -55 to 175 W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 1.
2 62 Units ℃/W ℃/W 1 201501143 AP55T10GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Tra...


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