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AP20N15GH-HF-3

Advanced Power Electronics
Part Number AP20N15GH-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 25, 2014
Detailed Description Advanced Power Electronics Corp. AP20N15GH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% ...
Datasheet PDF File AP20N15GH-HF-3 PDF File

AP20N15GH-HF-3
AP20N15GH-HF-3

Overview
Advanced Power Electronics Corp.
AP20N15GH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Tested Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 150V 100mΩ 20A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D (tab) G D The AP20N15GH-HF-3 is in the TO-252 surface-mount package which is widely used in commercial and industrial applications.
This device is well-suited S for use in medium voltage applications such as DC-DC converters and motor drives.
TO-252 (H) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 150 ±20 20 12 80 89.
2 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.
4 62.
5 Units °C/W °C/W Ordering Information AP20N15GH-HF-3TR : in RoHS-compliant, halogen-free TO-252, shipped on tape and reel (3000pcs/reel) ©2009 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200909142-3 1/5 Advanced Power Electronics Corp.
AP20N15GH-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=1mA 2 Min.
150 2 - Typ.
16 22 6 7.
7 10 33 27 26 230 9 1.
6 Max.
Units 100 4 25 100 ±100 35 2.
4 V mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS=10V, ID=10A VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=120V, VGS...


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