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AP05N50EJ-HF

Advanced Power Electronics
Part Number AP05N50EJ-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 25, 2014
Detailed Description AP05N50EH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteris...
Datasheet PDF File AP05N50EJ-HF PDF File

AP05N50EJ-HF
AP05N50EJ-HF


Overview
AP05N50EH/J-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 1.
6Ω 5A S Description The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP05N50EJ) is available for low-profile applications.
G GD S TO-252(H) D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ PD@TA=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 500 +30 5 20 73.
5 Units V V A A W W mJ A ℃ ℃ Total Power Dissipation Total Power Dissipation Avalanche Current Storage Temperature Range Operating Junction Temperature Range 4 2 2 12.
5 5 -55 to 150 -55 to 150 Single Pulse Avalanche Energy Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 1.
7 62.
5 110 Unit ℃/W ℃/W ℃/W 1 201008041 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice AP05N50EH/J-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=2A VDS=400V, VGS=0V VGS=+25V, VDS=0V ID=1A VDS=400V VGS=10V VDD=250V ID=1A RG=3.
3Ω ...


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