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AP4002H-HF

Advanced Power Electronics
Part Number AP4002H-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 25, 2014
Detailed Description AP4002H/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristi...
Datasheet PDF File AP4002H-HF PDF File

AP4002H-HF
AP4002H-HF

Overview
AP4002H/J-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 5Ω 2A S Description AP4002 series are specially designed as chopper regulator, DC/DC converter and power drive application.
The APEC MOSFET provide the best conbination of fast switching, ruggedized design and cost-effectiveness.
G D S TO-251(J) G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 +30 2 8 20 0.
16 2 Units V V A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 20 2 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 6.
25 62.
5 110 Unit ℃/W ℃/W ℃/W 1 201103254 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice AP4002H/J-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 3 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=10V, ID=2A VDS=600V, VGS=0V VGS=+30V, VDS=0V ID=2A VDS=480V VGS=10V VDD=200V ID=1A RG=50Ω,VGS=10V RD=200Ω VGS=0V VDS=10V f=1.
0MHz Min.
600 2 - Typ.
1.
5 12 2 5.
5 10 12 52 19 375 170 45 Max.
Units 5 4 100 +1 19 600 V Ω V S uA uA nC nC nC ns ns ns ns pF pF pF Gate-Source Charge Gate-Drain ("Miller...


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