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AP03N70I-A-HF

Advanced Power Electronics
Part Number AP03N70I-A-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 26, 2014
Detailed Description AP03N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching ▼ Simple Dri...
Datasheet PDF File AP03N70I-A-HF PDF File

AP03N70I-A-HF
AP03N70I-A-HF

Overview
AP03N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 3.
6Ω 3.
3A G S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 +30 3.
3 2.
1 10 29 0.
23 2 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 67 3 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.
3 65 Units ℃/W ℃/W 1 201008252 Data & specifications subject to change without notice AP03N70I-A-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 3 Min.
650 2 - Typ.
0.
6 2 12 3 5 9 5 18 6 600 45 4 Max.
Units 3.
6 4 10 500 +100 20 960 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current VGS=10V, ID=1.
6A VDS=VGS, ID=250uA VDS=10V, ID=1.
6A VDS=600V, VGS=0V Drain-Source Leakage Current (T j=125...


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