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WFR630

Wisdom
Part Number WFR630
Manufacturer Wisdom
Description N-Channel MOSFET
Published Sep 26, 2014
Detailed Description Wisdom Semiconductor WFR630 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.4 Ω )@VGS=10V Gate Charge (Typical 22n...
Datasheet PDF File WFR630 PDF File

WFR630
WFR630

Overview
Wisdom Semiconductor WFR630 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.
4 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2.
Drain ● 1.
Gate { ▲ ● ● { 3.
Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.
SOT-82 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 200 7.
0 4.
5 28 Units V A A A V mJ mJ V/ns W W/°C °C °C ±25 160 5.
0 5.
5 50 0.
4 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Value Min.
- Typ.
- Max.
2.
5 50 100 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) WFR630 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage ...


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