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AP02N90H-HF

Advanced Power Electronics
Part Number AP02N90H-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 26, 2014
Detailed Description AP02N90H/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fa...
Datasheet PDF File AP02N90H-HF PDF File

AP02N90H-HF
AP02N90H-HF

Overview
AP02N90H/J-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 900V 7.
2Ω 1.
9A Description S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP02N90J) is available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 900 +30 1.
9 1.
2 6 62.
5 0.
5 Units V V A A A W W/ ℃ W mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Total Power Dissipation Avalanche Current Storage Temperature Range Operating Junction Temperature Range 4 2 2 18 1.
9 -55 to 150 -55 to 150 Single Pulse Avalanche Energy Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 2 62.
5 110 Units ℃/W ℃/W ℃/W 1 201008115 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice AP02N90H/J-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions Min.
900 2 - Typ.
0.
8 2 12 2.
5 4.
7 10 5 18 9 630 40 4 Max.
Units 7.
2 4 10 100 +100 20 1000 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward...


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