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AP2307GN-HF-3

Advanced Power Electronics
Part Number AP2307GN-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 26, 2014
Detailed Description Advanced Power Electronics Corp. AP2307GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On...
Datasheet PDF File AP2307GN-HF-3 PDF File

AP2307GN-HF-3
AP2307GN-HF-3

Overview
Advanced Power Electronics Corp.
AP2307GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Surface Mount Device RoHS-compliant, halogen-free D BV DSS G S -16V 60mΩ -4A R DS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP2307GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.
This device is well suited for use in medium current applications such as load switches and DC-DC converters.
D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -16 ±8 -4 -3.
3 -12 1.
38 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W Ordering Information AP2307GN-HF-3TR : RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel ©2011 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 201003154-3 1/5 Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage 2 AP2307GN-HF-3 Test Conditions VGS=0V, ID=-250uA VGS=-4.
5V, ID=-4A Min.
-16 - Typ.
12 15 1.
3 4 8 11 54 36 985 180 160 Max.
Units 60 70 90 -1.
0 -1 -25 ±100 24 1580 V mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Static Drain-Source On-Resistance VGS=-2.
5V, ID=-3.
0A VGS=-1.
8V, ID=-2.
0A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=-25...


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