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AP2313GN-HF

Advanced Power Electronics
Part Number AP2313GN-HF
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP2313GN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ ...
Datasheet PDF File AP2313GN-HF PDF File

AP2313GN-HF
AP2313GN-HF

Overview
AP2313GN-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free SOT-23 D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G -20V 160mΩ -2.
5A D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 +12 -2.
5 -1.
97 -10 0.
83 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 150 Unit ℃/W 1 201201044 Data and specifications subject to change without notice AP2313GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min.
-20 - Typ.
-0.
01 4 5 1 2 6 17 16 5 270 70 55 Max.
Units 120 160 300 -1.
2 -1 -25 +100 8 430 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2.
8A VGS=-4.
5V, ID=-2.
5A VGS=-2.
5V, ID=-2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VDS=-20V, VGS=0V VGS=+12V, VDS=0V ID=-2A VDS=-16V VGS=-4.
5V VDS=-10V ID=-1A RG=3.
3Ω,VGS=-10V RD=10Ω VGS=0V VDS=-20V f=1.
0MHz Drain-Source Leakage Current (Tj=70 C) VDS=...


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