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AP2301AGN

Advanced Power Electronics
Part Number AP2301AGN
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP2301AGN RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ ...
Datasheet PDF File AP2301AGN PDF File

AP2301AGN
AP2301AGN

Overview
AP2301AGN RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 97mΩ - 3.
3A Description SOT-23 G D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 20 +8 -3.
3 -2.
7 -15 1.
38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 200902043 AP2301AGN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-4.
5V, ID=-3A VGS=-2.
5V, ID=-2.
6A VDS=VGS, ID=-250uA VDS=-5V, ID=-3A VDS=-16V, VGS=0V o Min.
-20 -0.
3 - Typ.
14 12.
5 1.
5 3.
5 8 17 24 33 920 90 85 4.
5 Max.
Units 97 130 -1 -1 -10 +100 21 1470 6.
8 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Drain-Source Leakage Current (Tj=55 C) VDS=-16V, VGS=0V VGS= +8V, VDS=0V ID=-3A VDS=-16V VGS=-4.
5V VDS=-10V ID=-1A RG=3.
3Ω,VGS=-5V RD=10Ω VGS=0V VDS=-20V f=1.
0MHz f=1.
0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay ...


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