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AP3310GH-HF-3

Advanced Power Electronics
Part Number AP3310GH-HF-3
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description Advanced Power Electronics Corp. AP3310GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast...
Datasheet PDF File AP3310GH-HF-3 PDF File

AP3310GH-HF-3
AP3310GH-HF-3

Overview
Advanced Power Electronics Corp.
AP3310GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics 2.
5V Gate Drive Capability RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID -20V 150mΩ -10A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S TO-252 (H) The AP3310GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters.
The through-hole TO-251 version (AP3310GJ-HF-3) is available where a small PCB footprint is required.
G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC =25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 ±12 -10 -6.
2 -24 25 0.
2 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient(PCB mount)3 Value 5.
0 62.
5 Unit °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient 110 Ordering Information AP3310GH-HF-3TR AP3310GJ-HF-3TB RoHS-compliant TO-252 shipped on tape and reel (3000 pcs/reel) RoHS-compliant TO-251 shipped in tubes ©2009 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200902096-3 1/8 Advanced Power Electronics Corp.
AP3310GH/J-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS ∆ BV DSS/DTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min.
Typ.
Max.
Units -20 -0.
5 -0.
1 4.
4 6 1.
5 0.
6 25 60 70 60 300 180 60 150 250 -1 -250 V V/°C mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature ...


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