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AP3310GJ-HF

Advanced Power Electronics
Part Number AP3310GJ-HF
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP3310GH/J-HF RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capa...
Datasheet PDF File AP3310GJ-HF PDF File

AP3310GJ-HF
AP3310GJ-HF

Overview
AP3310GH/J-HF RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ 2.
5V Gate Drive Capability ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150mΩ -10A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S TO-252(H) This device is suited for low voltage and battery power applications.
G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current 1 Rating - 20 +12 -10 -6.
2 -24 25 0.
01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 5.
0 62.
5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200902096 AP3310GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=-250uA 2 Min.
Typ.
Max.
Units -20 -0.
5 -0.
1 4.
4 6 1.
5 0.
6 25 60 70 60 300 180 60 150 250 -1 -250 V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-4.
5V, ID=-2.
8A VGS=-2.
5V, ID=-2.
0A VDS=VGS, ID=-250uA VDS=-5V, ID=-2.
8A VDS=-20V, VGS=0V VGS=+12V, VDS=0V ID=-2.
8A VDS=-6V VGS=-5V VDS=-6V ID=-1A RG=6Ω,VGS=-5V RD=6Ω VGS=0...


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