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AP9567GJ

Advanced Power Electronics
Part Number AP9567GJ
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP9567GH/J Pb Free Plating Product Advanced Power Electronics Corp. ϰ Lower On-resistance ϰ Simple Drive Requirement ϰ ...
Datasheet PDF File AP9567GJ PDF File

AP9567GJ
AP9567GJ

Overview
AP9567GH/J Pb Free Plating Product Advanced Power Electronics Corp.
ϰ Lower On-resistance ϰ Simple Drive Requirement ϰ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -40V 50mӨ -22A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9567GJ) is available for low-profile applications.
G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25к ID@TC=100к IDM PD@TC=25к TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -40 ±25 -22 -14 -50 34.
7 0.
28 -55 to 150 -55 to 150 Units V V A A A W W/ к к к Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter The...


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