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AP1005BSQ

Advanced Power Electronics
Part Number AP1005BSQ
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profil...
Datasheet PDF File AP1005BSQ PDF File

AP1005BSQ
AP1005BSQ


Overview
AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp.
▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.
7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 3.
8mΩ 19A Description The AP1005BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible.
The GreenFETTM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters.
GreenFETTM D G S D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ ID@TC=25℃ IDM PD@TA=25℃ PD@TA=70℃ PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 3 4 5 3 3 4 SQ Rating 25 +20 19 15 84 150 2.
2 1.
4 41.
7 28.
8 24 -40 to 150 -40 to 150 Units V V A A A A W W W mJ A ℃ ℃ Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case 4 3 3 58 ℃/W ℃/W 1 201009152 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP1005BSQ Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=19A VGS=4.
5V, ID=15A Min.
25 1 - Typ.
2.
6 4.
3 30 16.
6 3 0.
8 9.
2 3.
7 10 11 60 28 9 570 210 3.
3 Max.
Units 3.
8 7.
5 2.
5 1 150 +100 26.
6 V mΩ mΩ V S uA uA nA nC nC nC nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs1 Qgs2 Qgd Qgodr Qsw td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Dra...



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