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AP2304GN-HF

Part Number	AP2304GN-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 27, 2014
Detailed Description	AP2304GN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small package outline ▼ ...
Datasheet	AP2304GN-HF PDF File

Overview

AP2304GN-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small package outline ▼ Surface mount package ▼ RoHS Compliant & Halogen-Free S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 117mΩ 2.
7A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 25 +20 2.
7 2.
2 10 1.
38 0.
01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 200908315 AP2304GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=2.
5A VGS=4.
5V, ID=2A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
25 1 - Typ.
3.
4 5.
9 0.
8 2.
1 4.
5 11.
5 12 3 110 85 39 Max.
Units 117 190 3 1 10 +100 10 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=250uA VDS=4.
5V, ID=2.
5A VDS=25V, VGS=0V VGS=+20V, VDS=0V ID=2.
5A VDS=15V VGS=10V VDS=15V ID=1A RG=6Ω,VGS=10V RD=15Ω VGS=0V VDS=15V f=1.
0MHz Drain-Source Leakage Current (Tj=55 C) VDS=20V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-D...

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AP2304GN-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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