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AP0603GH-HF

Part Number	AP0603GH-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 27, 2014
Detailed Description	AP0603GH-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast...
Datasheet	AP0603GH-HF PDF File

Overview

AP0603GH-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 6mΩ 72A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
□ G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 +20 72 45 288 50 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation 3 2 -55 to 150 -55 to 150 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 2.
5 62.
5 Units ℃/W ℃/W 1 201006213 Data & specifications subject to change without notice AP0603GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VGS=4.
5V, ID=30A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Min.
30 1 - Typ.
50 10 3 6 7.
5 75 17 5 980 325 110 1.
4 Max.
Units 6 11 3 10 +100 16 V mΩ mΩ V S uA nA nC nC nC 1570 2.
1 ns ns ns ns pF pF pF Ω VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VGS=+20V, VDS=0V ID=30A VDS=24V VGS=4.
5V VDS=15V ID=30A RG=3.
3Ω,VGS=10V RD=0.
5Ω VGS=0V VDS=25V f=1.
0M...

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AP0603GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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