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AP4813GSM-HF

Part Number	AP4813GSM-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 27, 2014
Detailed Description	AP4813GSM-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Recovery Time ▼ Fa...
Datasheet	AP4813GSM-HF PDF File

Overview

AP4813GSM-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Good Recovery Time ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free D D D D N-CHANNEL MOSFET WITH SCHOTTKY DIODE BVDSS RDS(ON) G 30V 9mΩ 13A ID D SO-8 S S S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G S Schottky Diode Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM VKA IF@TA=25℃ IFM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 13 10.
6 50 30 1 25 2.
5 2.
0 -55 to 150 -55 to 150 Units V V A A A V A A W W ℃ ℃ Schottky Reverse Voltage Continous Forward Current Pulsed Diode Forward Current Max Power Dissipation (MOSFET) Max Power Dissipation (Schottky) Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient (MOSFET) 3 Value 50 60 3 Unit ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient (Schottky) Data and specifications subject to change without notice 1 200910301 AP4813GSM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=12A VGS=4.
5V, ID=8A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
30 1 - Typ.
20 11.
5 2.
5 7 9 7 23 8 730 205 150 1.
5 Max.
Units 9 15 3 100 1 +100 18 1170 V mΩ mΩ V S uA mA nA nC nC nC ns ns ns ns pF pF pF Ω VDS=VGS, ID=250uA VDS=10V, ID=8A VDS=30V...

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AP4813GSM-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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