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NGD8209N

Part Number	NGD8209N
Manufacturer	ON Semiconductor
Description	Ignition IGBT
Published	Sep 29, 2014
Detailed Description	NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features mon...
Datasheet	NGD8209N PDF File

Overview

NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications.
Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features http://onsemi.
com • • • • • • • Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability These are Pb−Free Device...

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