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NGD8205ANT4G

ON Semiconductor
Part Number NGD8205ANT4G
Manufacturer ON Semiconductor
Description Ignition IGBT
Published Aug 24, 2015
Detailed Description NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (...
Datasheet PDF File NGD8205ANT4G PDF File

NGD8205ANT4G
NGD8205ANT4G

Overview
NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications.
Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • DPAK Package Offers Smaller Footprint for Increased Board Space • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) • These are Pb−Free Devices Applications • Ignition Systems MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed VCES VCER VGE IC 390 390 "15 20 50 V V V ADC AAC Continuous Gate Current Transient Gate Current (t≤2 ms, f≤100 Hz) ESD (Charged−Device Model) IG IG ESD 1.
0 mA 20 mA 2.
0 kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD kV 8.
0 ESD (Machine Model) R = 0 W, C = 200 pF ESD 400 V Total Power Dissipation @ TC = 25°C Derate above 25°C PD 125 W 0.
83 W/°C Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev.
9 1 http://onsemi.
com 20 A, 350 V VCE(on) = 1.
3 V @ IC = 10 A, VGE .
4.
5 V C G RG RGE E 4 1...


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