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NGD8209NT4G

ON Semiconductor
Part Number NGD8209NT4G
Manufacturer ON Semiconductor
Description Ignition IGBT
Published Sep 29, 2014
Detailed Description NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features mon...
Datasheet PDF File NGD8209NT4G PDF File

NGD8209NT4G
NGD8209NT4G

Overview
NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications.
Primary uses include motorbike ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features http://onsemi.
com • • • • • • • Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load Low Saturation Voltage High Pulsed Current Capability These are Pb−Free Devices 12 AMPS 410 VOLTS VCE(on) 3 2.
0 V @ IC = 6.
0 A, VGE .
4.
0 V C G RG RGE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF...


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