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HAT1038RJ

Hitachi Semiconductor
Part Number HAT1038RJ
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT1038R/HAT1038RJ Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-663C (Z) 4th. Edition February 19...
Datasheet PDF File HAT1038RJ PDF File

HAT1038RJ
HAT1038RJ

Overview
HAT1038R/HAT1038RJ Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-663C (Z) 4th.
Edition February 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT1038R/HAT1038RJ Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1038R HAT1038RJ Avalanche energy HAT1038R HAT1038RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1.
2.
3.
4.
Pch Pch Tch Tstg Note2 Note3 Symbol VDSS VGSS ID I D(pulse) I DR I AP Note4 Note1 Ratings – 60 ± 20 – 3.
5 – 28 – 3.
5 — – 3.
5 Unit V V A A A — A — mJ W W °C °C EAR Note4 — 1.
05 2 3 150 – 55 to + 150 PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10 s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω 2 HAT1038R/HAT1038RJ Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT1038R Symbol Min V(BR)DSS V(BR)GSS I GSS I DSS – 60 ± 20 — — — — — – 1.
2 — — 3 — — — — — — — — — Typ — — — — — — — — 0.
12 0.
16 4.
5 600 290 75 11 30 100 55 Max — — ± 10 –1 – 0.
1 — –10 – 2.
2 0.
15 0.
23 — — — — — — — — Unit V V µA µA µA µA µA V Ω Ω S pF pF pF ns ns ns ns IF = – 3.
5 A, VGS = 0 Note5 IF = – 3.
5 A, VGS = 0 diF/ dt = 50A/µs VDS = – 48 V, VGS = 0 Ta=125°C VDS = – 10 V, I D = – 1 mA I D = – 2 A, VGS = – 10 V Note5 I D = – 2 A, VGS = – 4 V Note5 I D = – 2 A, VDS = – 10 V Note5 VDS = –10 V VGS = 0 f = 1MHz VGS = –10 V, ID = – 2 A VDD ≅ – 30 V Test Conditions I D = – 10 mA, VGS = 0 I G = ± 100 µA...


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