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HAT2019R

Hitachi Semiconductor
Part Number HAT2019R
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT2019R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-481 D (Z) 5th. Edition February 1999 Featur...
Datasheet PDF File HAT2019R PDF File

HAT2019R
HAT2019R

Overview
HAT2019R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-481 D (Z) 5th.
Edition February 1999 Features • • • • Low on-resistance Capable of 2.
5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2019R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ± 12 8 64 8 2.
5 150 – 55 to + 150 Unit V V A A A W °C °C 1.
PW ≤...


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