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AP3402GEH

Advanced Power Electronics
Part Number AP3402GEH
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 1, 2014
Detailed Description AP3402GEH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ S...
Datasheet PDF File AP3402GEH PDF File

AP3402GEH
AP3402GEH


Overview
AP3402GEH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 35V 18mΩ 38A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP3402GEJ) are available for low-profile applications.
GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 35 ±20 38 24 110 34.
7 0.
27 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 3.
6 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200420052-1/4 Downloaded from Elcodis.
com electronic components distributor AP3402GEH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min.
35 1 - Typ.
0.
03 22 10.
5 4 6 9 78 19 4 950 160 110 2.
5 Max.
Units 18 32 3 1 25 ±30 17 1520 3.
8 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=25A VGS=4.
5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage F...


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