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AP9468GM

Advanced Power Electronics
Part Number AP9468GM
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 1, 2014
Detailed Description AP9468GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement D D D D...
Datasheet PDF File AP9468GM PDF File

AP9468GM
AP9468GM

Overview
AP9468GM RoHS-compliant Product Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 40V 7mΩ 14.
6A ▼ Fast Switching Characteristic SO-8 S S S ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widly preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 ± 20 14.
6 11.
7 60 2.
5 0.
02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 201015071-1/4 AP9468GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=14A VGS=4.
5V, ID=7A Min.
40 0.
5 - Typ.
14 32 4 16 10 7 56 26 365 325 1.
8 Max.
Units 7 9 2 10 100 ±100 51 2.
7 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=14A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=±20V ID=14A VDS=32V VGS=4.
5V VDS=20V ID=1A RG=3.
3Ω,VGS=10V RD=20Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain...


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