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AP9466GJ

Advanced Power Electronics
Part Number AP9466GJ
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 1, 2014
Detailed Description AP9466GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ Fas...
Datasheet PDF File AP9466GJ PDF File

AP9466GJ
AP9466GJ

Overview
AP9466GH/J RoHS-compliant Product Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Single Drive Requirement ▼ Fast Switching Characteristics G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 40V 13.
5mΩ 40A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9466GJ) are available for low-profile applications.
G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 40 + 20 40 25 150 36.
7 0.
29 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.
4 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 1 200806182 AP9466GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=26A VGS=4.
5V, ID=16A VDS=VGS, ID=250uA VDS=10V, ID=26A VDS=40V, VGS=0V o Min.
40 1 - Typ.
24.
5 13.
5 2.
6 9.
4 7 73 20 8 800 170 140 1.
3 Max.
Units 13.
5 21 3 1 25 +100 22 1280 2 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=150 C) VDS=32V ,VGS=0V VGS=...


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