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HAT2051T

Hitachi Semiconductor
Part Number HAT2051T
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT2051T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-661A (Z) 2nd. Edition February 1999 Feature...
Datasheet PDF File HAT2051T PDF File

HAT2051T
HAT2051T

Overview
HAT2051T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-661A (Z) 2nd.
Edition February 1999 Features • • • • Low on-resistance Capable of 2.
5 V gate drive Low drive current High density mounting Outline TSSOP–8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 MOS1 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate HAT2051T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 30 ± 10 1 4 1 0.
8 1.
2 150 – 55 to + 150 Unit V V A A A W W °C °C 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s 3.
2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ± 10 — — 0.
75 — — 1.
4 — — — — — — — — — Typ — — — — — 0.
14 0.
2 2.
2 155 75 35 12 30 35 25 0.
81 35 Max — — ± 10 1 1.
75 0.
2 0.
3 — — — — — — — — 1.
1 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 1 A, VGS = 0 Note4 I F = 1 A, VGS = 0 diF/ dt = 20 A/µs Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 8 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA I D = 0.
5 A, VGS = 10 V Note4 I D = 0.
5 A, VGS = 4 V Note4 I D = 0.
5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1MHz VGS = 4 V, ID = 0.
5 A VDD ≅ 10 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4.
Pulse t...


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