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AP9965GEJ

Advanced Power Electronics
Part Number AP9965GEJ
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 1, 2014
Detailed Description AP9965GEH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fa...
Datasheet PDF File AP9965GEJ PDF File

AP9965GEJ
AP9965GEJ

Overview
AP9965GEH/J RoHS-compliant Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 40V 28mΩ 27A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9965GEJ) are available for low-profile applications.
G □ D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 40 +16 27 17 80 31.
25 0.
25 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 4.
0 62.
5 110 Units ℃/W ℃/W ℃/W 1 200903094 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Downloaded from Elcodis.
com electronic components distributor AP9965GEH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min.
40 0.
8 - Typ.
0.
03 21 8.
5 1.
6 4.
1 5.
3 6.
7 20.
5 4.
5 610 90 60 1.
8 Max.
Units 28 32 2.
5 1 250 +30 14 980 2.
4 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V,...


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