DatasheetsPDF.com

AP9971AGJ

Advanced Power Electronics
Part Number AP9971AGJ
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 2, 2014
Detailed Description AP9971AGH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ ...
Datasheet PDF File AP9971AGJ PDF File

AP9971AGJ
AP9971AGJ

Overview
AP9971AGH/J RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 36mΩ 22A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9971AGJ) are available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 +20 22 14 80 34.
7 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 3.
6 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200807022 AP9971AGH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=15A VGS=6V, ID=10A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (T j=150 C) o Min.
60 1 - Typ.
12.
4 17 2.
5 6.
4 6.
6 22 17 4.
3 625 90 65 Max.
Units 36 50 3 10 100 +100 27 1000 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=250uA VDS=10V, ID=15A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS= +20V ID=15A VDS=48V VGS=10V VDS=30V ID=15A RG...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)