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GW30NC60WD

STMicroelectronics
Part Number GW30NC60WD
Manufacturer STMicroelectronics
Description ultra fast IGBT
Published Oct 3, 2014
Detailed Description STGW30NC60WD N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH™ IGBT Features Type STGW30NC60WD ■ ■ ■ VCES 6...
Datasheet PDF File GW30NC60WD PDF File

GW30NC60WD
GW30NC60WD

Overview
STGW30NC60WD N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH™ IGBT Features Type STGW30NC60WD ■ ■ ■ VCES 600V VCE(sat)Max @25°C < 2.
5V IC @100°C 30A High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode TO-247 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “W” identifies a family optimized for very high frequency application.
Figure 1.
Internal schematic diagram Applications ■ ■ High frequency motor controls, inverters, ups HF, SMPS and PFC in both hard switch and resonant topologies Table 1.
Device summary Marking GW30NC60WD Package TO-247 Packaging Tube Order code STGW30NC60WD July 2007 Rev 4 1/14 www.
st.
com 14 Contents STGW30NC60WD Contents 1 2 Electrical ratings .
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3 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 4 5 Test circuit .
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9 Package mechanical data .
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10 Revision history .
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12 2/14 STGW30NC60WD Electrical ratings 1 Electrical ratings Table 2.
Symbol VCES IC IC ICM(1) VGE PTOT Tstg Tj TL Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at 25°C Collector current (continuous) at 100°C Collector current (pulsed) Gate-emitter voltage Total dissipation at TC = 25°C Storage temperature – 55 to 150 Operating junction temperature Maximum lead temperature for soldering purpose (1.
6mm from case, for 10 sec.
) 300 °C °C Value ...


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