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AP9980GH-HF

Advanced Power Electronics
Part Number AP9980GH-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 4, 2014
Detailed Description AP9980GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Fast...
Datasheet PDF File AP9980GH-HF PDF File

AP9980GH-HF
AP9980GH-HF

Overview
AP9980GH/J-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 80V 45mΩ 21.
3A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9980GJ) are available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 80 +25 21.
3 13.
4 80 41.
7 0.
33 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3 62.
5 110 Units ℃/W ℃/W ℃/W 1 201102143 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP9980GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min.
80 1 - Typ.
0.
07 20 18 5 11 11 20 29 30 135 96 1.
6 Max.
Units 45 55 3 10 100 +100 30 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V, ID=12A VGS=4.
5V, ID=8A VDS=V...


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