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AP02N40H-HF

Advanced Power Electronics
Part Number AP02N40H-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 4, 2014
Detailed Description AP02N40H/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characterist...
Datasheet PDF File AP02N40H-HF PDF File

AP02N40H-HF
AP02N40H-HF

Overview
AP02N40H/J-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 400V 5Ω 1.
6A S Description AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP02N40J) is available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 400 +30 1.
6 1 3 33 2 Units V V A A A W mJ A ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 5 1 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 3.
8 62.
5 110 Unit ℃/W ℃/W ℃/W 1 201003172 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice AP02N40H/J-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o o Test Conditions VGS=0V, ID=1mA 3 Min.
400 2 - Typ.
1.
5 6.
4 1.
2 3.
2 8 9 21 12 180 22 5.
6 Max.
Units 5 4 25 250 +100 10 300 V Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=10V, ID=0.
7A VDS=VGS, ID=250uA VDS=10V, ID=1A VDS=400V, VGS=0V VGS=+30V, VDS=0V ID=1A VDS=320V VGS=10V VDD=200V ID=1...


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